The GTO and IGBT models are essentially the same. The GTO/IGBT is usually turned ON and OFF by firing pulses supplied to the gate terminal. A n external control signal is required to generate the gate firing pulses.
The characteristics of the GTO/IGBT are very similar to that of the Thyristor except that a GTO/IGBT can be forced to turn OFF with a gate pulse of 0, while the device is forward biased.
The V-I characteristic for the GTO/IGBT model is shown below:
The Interpolation Algorithm is automatically invoked during all naturally commutated turn ON and turn OFF events (including Forward Break-Over), to calculate the exact instant of switching. Please note however, that the user is provided a choice to interpolate the incoming gate signal.
NOTE: Reverse recovery time (i.e. the time for which a finite reverse current flows in the device, following a turn OFF) of the diode is assumed zero. If the ON resistance is zero or smaller than the Switching Threshold value, the closed state will be modeled as an ideal short circuit.
