This component models a multi-valve, half-bridge MMC with Thévenin equivalent circuits, which effectively increases the computational efficiency [42] [43].
The equivalent resistive circuit for a half-bridge cell has been derived as shown below:
With:
The RA and RB stand for the equivalent switching resistances of the two IGBT/Diode pairs [42]. And thus, the final equivalent circuit parameters for the half-bridges are given by:
FP1: Required switching signals for the upper IGBT
FP2: Required switching signals for the lower IGBT
VC: Array of capacitor voltages
IC: Array of capacitor currents
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Converter ParametersConverter Parameters
Name |
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Optional text parameter for identification of the component. |
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Configuration |
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Choice |
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Select Bypass at Top or Bypass at Bottom. |
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Number of Equivalent Sub-modules |
INTEGER |
Literal |
Number of half-bridge cells connected in series. |
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Capacitance per Sub-module |
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REAL |
Constant |
Capacitance for each half-bridge cell [mF]. |
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Sum of Capacitor Voltages at Time Zero |
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REAL |
Constant |
This value is used to model initial condition of the cell capacitors [kV]. |
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Capacitor Leakage Resistance |
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REAL |
Constant |
Leakage resistance of the cell capacitor [W]. |
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Enable Partial Blocking? |
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Choice |
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Select Yes or No. |
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IGBT ON Resistance |
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REAL |
Constant |
ON state resistance of the IGBT [W]. |
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IGBT OFF Resistance |
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REAL |
Constant |
OFF state resistance of the IGBT [W]. |
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Diode ON Resistance |
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REAL |
Constant |
ON state resistance of the anti-parallel diode [W]. |
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Diode OFF Resistance |
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REAL |
Constant |
OFF state resistance of the anti-parallel diode [W]. |
Total Current Flowing Through |
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Signal name of the current [kA]. |
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Voltage Across Terminals |
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Signal name of the voltage [kV]. |