This component models a multi-valve, full-bridge MMC with Thévenin equivalent circuits, which effectively increases the computational efficiency [42] [43].
The equivalent resistive circuit for a full-bridge cell has been derived as shown below:
With:
The RA and RB stand for the equivalent switching resistances of the two IGBT/Diode pairs [42]. And thus, the final equivalent circuit parameters for the half-bridges are given by:
FP1, FP2, FP3, FP4: Required switching signals for the corresponding IGBT numbered as 1, 2, 3, 4.
VC: Array of capacitor voltages.
IC: Array of capacitor currents.
More: |
Name |
Text |
Optional text parameter for identification of the component. |
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Number of Cells |
INTEGER |
Literal |
Number of full-bridge cells connected in series. |
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Capacitance per Sub-module |
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REAL |
Constant |
Capacitance for each half-bridge cell [mF]. |
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Sum of Capacitor Voltages at Time Zero |
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REAL |
Constant |
This value is used to model initial condition of the cell capacitors [kV]. |
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Capacitor Leakage Resistance |
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REAL |
Constant |
Leakage resistance of the cell capacitor [W]. |
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Enable Partial Blocking? |
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Choice |
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Select Yes or No. |
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IGBT ON Resistance |
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REAL |
Constant |
ON state resistance of the IGBT [W]. |
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IGBT OFF Resistance |
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REAL |
Constant |
OFF state resistance of the IGBT [W]. |
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Diode ON Resistance |
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REAL |
Constant |
ON state resistance of the anti-parallel diode [W]. |
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Diode OFF Resistance |
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REAL |
Constant |
OFF state resistance of the anti-parallel diode [W]. |